An analytical model of the switching behavior of 4H-SiC p +-n-n + Diodes from Arbitrary Injection Conditions

IEEE Transactions on Power Electronics

Volumn 27, Issue 3, 2012, Pages 1641-1652

  Bellone, Salvatore ^a   Corte, Francesco G Della ^b   Di Benedetto, Luigi ^a   Licciardo, Gian Domenico ^a  

^a UNIVERSITY OF SALERNO   (Italy)

^b UNIVERSITY MEDITERRANEA OF REGGIO CALABRIA   (Italy)

Author keywords

4H polytype of silicon carbide (4H SiC); Diodes; reverse recovery; storage; turn OFF

Indexed keywords

4H POLYTYPE OF SILICON CARBIDE (4H-SIC); ANALYTICAL MODEL; CURRENT COMPONENT; FORWARD CURRENTS; INJECTION CONDITIONS; LARGE-SIGNALS; OPERATION CONDITIONS; REVERSE RECOVERY; SIC DIODES; SPATIAL-TEMPORAL DISTRIBUTION; SWITCHING BEHAVIORS; TURN-OFF; VOLTAGE TRANSIENTS;

ANALYTICAL MODELS; COMPUTER SIMULATION; DIODES; ELECTRIC FIELDS; ENERGY STORAGE; MODELS; POWER QUALITY;

SILICON CARBIDE;

EID: 84856831031     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2011.2164097     Document Type: Article

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