Ni/Ti ohmic and Schottky contacts on 4H-SiC formed with a single thermal treatment

Diamond and Related Materials

Volumn 14, Issue 3-7, 2005, Pages 1146-1149

  Perez R ^a,b   Mestres, N ^a   Tournier, D ^b   Godignon, P ^b   Millan J ^b  

^a INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

Electrical properties characterisation; Ohmic contacts; Schottky diodes; Silicon carbide (SiC)

Indexed keywords

DEGRADATION; ELECTRIC POTENTIAL; HEAT TREATMENT; HIGH TEMPERATURE EFFECTS; NICKEL; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; TITANIUM;

CONTACT RESISTIVITY; ELECTRICAL PROPERTIES CHARACTERIZATION; SCHOTTKY DIODES; VOLTAGE DROP;

SILICON CARBIDE;

EID: 18444416859     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.11.015     Document Type: Conference Paper

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