Formation of Ohmic hole injection by inserting an ultrathin layer of molybdenum trioxide between indium tin oxide and organic hole-transporting layers

Applied Physics Letters

Volumn 91, Issue 25, 2007, Pages

  Matsushima, Toshinori ^a   Kinoshita, Yoshiki ^a   Murata, Hideyuki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; BUFFER LAYERS; CURRENT DENSITY; MOLYBDENUM COMPOUNDS; OHMIC CONTACTS; X RAY PHOTOELECTRON SPECTROSCOPY;

CURRENT DENSITY VOLTAGE CHARACTERISTICS; INDIUM TIN OXIDE; OHMIC HOLE INJECTION;

ULTRATHIN FILMS;

EID: 37549058758     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2825275     Document Type: Article

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