Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers

Applied Physics Letters

Volumn 101, Issue 5, 2012, Pages

  Mandal, Krishna C ^a   Muzykov, Peter G ^a   Russell Terry, J ^b  

^a The Department of Mechanical Engineering   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; DEEP-LEVELS; HIGH QUALITY; LOW DENSITY; LOW-ENERGY RANGE; LOW-ENERGY X-RAYS; LOW-LEAKAGE CURRENT; RESPONSIVITY; SCHOTTKY DIODES; SOFT X-RAY; THERMALLY STIMULATED CURRENT; X-RAY DETECTOR; X-RAY ENERGIES;

CHARGE TRAPPING; DIODES; EPITAXIAL GROWTH; HIGH TEMPERATURE OPERATIONS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; X RAY DIFFRACTION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84864645907     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4742741     Document Type: Article

References (12)

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