Interdigit 4H-SiC vertical schottky diode for betavoltaic applications

IEEE Transactions on Electron Devices

Volumn 58, Issue 3, 2011, Pages 593-599

  Sciuto, A ^a   D'Arrigo, G ^a   Roccaforte, F ^a   Mazzillo, M ^b   Spinella, R C ^a   Raineri, V ^a  

^a CNR   (Italy)

^b RandD Department   (Italy)

Author keywords

4H SiC; Betavoltaic; electron beam induced current (EBIC)

Indexed keywords

4H-SIC; BETAVOLTAIC; ELECTRON-BEAM-INDUCED CURRENT (EBIC); LOW ENERGY ELECTRONS; METALLIZATIONS; MONOCHROMATIC ELECTRON BEAMS; SCHOTTKY DIODES;

ELECTRON BEAMS; ELECTRONS; OPEN CIRCUIT VOLTAGE; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79952039822     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2094622     Document Type: Article

References (20)

1. M. V. S. Chandrashekhar, C. I. Thomas, H. Li, M. G. Spencer, and A. Lal, "Demonstration of a 4H SiC betavoltaic cell," Appl. Phys. Lett., vol. 88, no. 3, pp. 033 506-1-033 506-3, Jan. 2006.
2. Q. Da-Yong, Y. Wei-Zheng, G. Peng, Y. Xian-Wang, Z. Bo, Z. Lin, G. Hui, and Z. Hong-Jian, "Demonstration of a 4H SiC betavoltaic nuclear battery based on Schottky barrier diode," Chin. Phys. Lett., vol. 25, no. 10, pp. 3798-3800, Oct. 2008.
3. H. Li, A. Lal, J. Blanchard, and D. Henderson, "Self-reciprocating radioisotope-powered cantilever," J. Appl. Phys., vol. 92, no. 2, pp. 1122-1127, Jul. 2002.
4. W. H. Ko and J. Hynecek, "Implant evaluation of a nuclear power source - Betacel battery," IEEE Trans. Biomed. Eng., vol. BME-21, no. 3, pp. 238-241, May 1974.
5. M. Mazzillo, G. Condorelli, M. E. Castagna, G. Catania, A. Sciuto, F. Roccaforte, and V. Raineri, "Highly efficient low reverse biased 4HSiC Schottky photodiodes for UV-light detection," IEEE Photon. Technol. Lett, vol. 21, no. 23, pp. 1782-1784, Dec. 2009.
6. A. Sciuto, F. Roccaforte, S. Di Franco, V. Raineri, and G. Bonanno, "High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect," Appl. Phys. Lett., vol. 89, no. 8, pp. 081 111-1-081 111-3, Aug. 2006.
7. A. Sciuto, F. Roccaforte, S. Di Franco, S. F. Liotta, V. Raineri, and G. Bonanno, "High efficiency 4H-SiC Schottky UV-photodiodes using self-aligned semitransparent contacts," Superlattices Microst., vol. 41, no. 1, pp. 29-35, Jan. 2007. (Pubitemid 46205068)
8. S. M. Sze, Semiconductor Devices Physics and Technology. NewYork: Wiley, 1985.
9. A. Itoh, T. Kimoto, and H. Matsunami, "Efficient power Schottky rectifiers of 4H-SiC," in Proc. ISPSD, 1995, pp. 101-106.
10. F. Roccaforte, F. La Via, V. Raineri, R. Pierobon, and E. Zanoni, "Richardson's constant in inhomogeneous silicon carbide Schottky contacts," J. Appl. Phys., vol. 93, no. 11, pp. 9137-9144, Jun. 2003.
11. E. J. Sternglass, "Backscattering of kilovolt electrons from solid," Phys. Rev., vol. 95, no. 2, pp. 345-358, Jul. 1954.
12. D. Drouin, A. R. Couture, R. Gauvin, P. Hovington, P. Horny, and H. Demers, CASINO Copyright 2001, Univeristy of Sherbrooke, Sherbrooke, Quebec, Canada, Aug. 5, 2002, [Online]. Available: http://www.gel.usherbrooke.ca/casino/ index.html
13. [Online]. Available: http://www.ioffe.ru/SVA/NSM/Semicond/
14. [Online]. Available: http://www.espimetals.com/msds%27s/ nickelsilicideni2si.pdf
15. F. J. Hohn, "Background and applications of electron beam test techniques," Microelectron. Eng., vol. 4, no. 2, pp. 139-157, Dec. 1986.
16. K. Kanaya and S. Okayama, in Proc. 7th Int. Congr. Electron Microscopy, Grenoble, 1970, vol. 2, pp. 159-160.
17. G. D. Archard, "Backscattering of electrons," J. Appl. Phys., vol. 32, no. 8, pp. 1505-1509, Aug. 1961.
18. F. Nava, G. Wagner, C. Lanzieri, P. Vanni, and E. Vittone, "Investigation of Ni/4H-SiC diodes as radiation detectors with low doped n-type 4H-SiC epilayers," Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., vol. 510, no. 3, pp. 273-280, Sep. 2003.
19. M. V. S. Chandrashekhar, C. I. Thomas, and M. G. Spencer, "Measurement of the mean electron-hole pair ionization energy in 4H SiC," Appl. Phys. Lett., vol. 89, no. 4, pp. 042 113-1-042 113-3, Jul. 2006.
20. M. Shur, Physics of Semiconductor Devices. Englewood Cliffs, NJ: Prentice-Hall, 1990.