Current transport mechanism of antimony-doped TiO2 nanoparticles based on MOS device

Sensors and Actuators, A: Physical

Volumn 199, Issue , 2013, Pages 18-23

  Sönmezoǧlu, Savaş ^a   Akin, Seçkin ^a  

^a KARAMANOGLU MEHMETBEY UNIVERSITY   (Turkey)

Author keywords

Fowler Nordheim tunneling; I V and C V characteristics; Metal oxide semiconductor (MOS) device; Sb doped TiO2 nanoparticles

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT TRANSPORT MECHANISM; ELECTRICAL CHARACTERIZATION; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; FOWLER-NORDHEIM TUNNELING; I-V AND C-V CHARACTERISTICS; METAL OXIDE SEMICONDUCTOR; TIO;

DIELECTRIC DEVICES; DOPING (ADDITIVES); ELECTRIC PROPERTIES; MOS DEVICES; NANOPARTICLES; SEMICONDUCTOR DEVICE STRUCTURES; TITANIUM DIOXIDE; X RAY DIFFRACTION;

SEMICONDUCTING SILICON;

EID: 84878858490     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2013.04.037     Document Type: Article

References (51)

1. M. Dragoman, A. Cismaru, H. Hartnagel, and R. Plana Reversible metal-semiconductor transitions for microwave switching applications Applied Physics Letters 88 2006 073503 073505
2. 2 nanocomposite and its application as a humidity sensor Philosophical Magazine 88 2008 1113 1124
3. Q. Wang High-efficiency hydrogenated amorphous/crystalline Si heterojunction solar cells Philosophical Magazine 89 2009 2587 2598
4. 2 grown by multipolar ECR source to Si/SiGe MISFET Electronics Letters 29 1993 277 278
5. S. Sönmezoǧlu, S. Şenkul, R. Taş, G. Çankaya, and M. Can Electrical characteristics of an organic thin copolymer/p-Si Schottky barrier diode Thin Solid Films 518 2010 4375 4379
6. S. Sönmezoǧlu, Ö.A. Sönmezoǧlu, G. Çankaya, A. YIldIrIm, and N. Serin Electrical characteristics of DNA-based metal-insulator-semiconductor structures Journal of Applied Physics 107 2010 124518 124523
7. S. Sönmezoǧlu, C.B. Durmuş, R. Taş, G. Çankaya, and M. Can Fabrication and characterization of organic copolymer-based Schottky diodes Semiconductor Science and Technology 26 2011 055011 055015
8. S. Sönmezoǧlu, S. Şenkul, R. Taş, G. Çankaya, and M. Can Electrical and interface state density properties of polyaniline-poly-3-methyl-thiophene blend/p-Si Schottky barrier diode Solid State Sciences 12 2010 706 711
9. 2 Schottky barrier type diodes Solid State Electronics 33 1990 11 19 (Pubitemid 20735236)
10. B. Akkal, Z. Benamara, L. Bideux, and B. Gruzza Electrical characterization of the Au/InP(1 0 0) and Au/InSb/InP(1 0 0) structures Microelectronics Journal 30 1999 673 678
11. S.M. Sze, and K.N. Kwok Physics of Semiconductor Devices 2007 John Wiley New Jersey
12. E.H. Rhoderick, and R.H. Williams Metal-Semiconductor Contacts 1988 Clarendon Oxford
13. 2/Si interface with various interlayers Journal of Applied Physics 103 2008 043509 043514
14. 2/n-Si (MIS) Schottky diodes Solid State Electronics 51 2007 941 946
15. 2/p-Si (MIS) Schottky diodes Microelectronic Engineering 83 2006 582 588 (Pubitemid 43277464)
16. 4/p-Si (MIS) Schottky diodes Microelectronic Engineering 83 2006 577 581 (Pubitemid 43277463)
17. 0.7 MIS structures using conductance technique Semiconductor Science and Technology 21 2006 335 340 (Pubitemid 43254107)
18. 2 as insulator layer Current Applied Physics 12 2012 1372 1377
19. 2 nanoparticles Current Nanoscience 9 2013 39 45
20. 2 Materials Letters 58 2004 1502 1507
21. 2 Philosophical Magazine 91 2011 958 980
22. M.M. Frank, S. Kim, S.L. Brown, J. Bruley, M. Copel, M. Hopstaken, M. Chudzik, and V. Narayanan Scaling the MOSFET gate dielectric: from high-k to higher-k? Microelectronic Engineering 86 2009 1603 1608
23. U. Diebold The surface science of titanium dioxide Surface Science Reports 48 2003 53 229
24. 2 buffer layer on the structural and optical properties of ZnO thin films Applied Surface Science 255 2008 3230 3233
25. S. Sönmezoǧlu, G. Çankaya, and N. Serin Phase transformation of nanostructured titanium dioxide thin films grown by sol-gel method Applied Physics A 107 2012 233 241
26. 2 under thermal annealing Nanotechnology 14 2003 1168 1171
27. W. Kern Handbook of Semiconductor Cleaning Procedure 1993 Noyes New York
28. 2 thin films Semiconductor Science and Technology 21 2006 1573 1579 (Pubitemid 46222403)
29. 7 Physical Review Letters 28 1972 1390 1393
30. 7 single crystals: crystal characterization, specific heat, and electron paramagnetic resonance Physical Review B 14 1976 1429 1440
31. 7 Journal of Physics: Condensed Matter 18 2006 10955 10964 (Pubitemid 46069840)
32. 11 Europhysics Letters 61 2003 361 367 (Pubitemid 36209147)
33. 3 Europhysics Letters 64 2003 682 688 (Pubitemid 37469980)
34. 2 thin films in relation to their stoichiometric deviation and their crystalline structure Thin Solid Films 41 1977 127 135
35. S.M. Sze Physics of Semiconductor Devices 1981 Wiley New York
36. 2 heterojunction diode Applied Physics Express 4 2011 104104 104106
37. 2 interfacial insulator layer Journal of Alloys and Compounds 505 2010 628 633
38. 2(rutile)/n-Si Schottky barrier diode Surface and Interface Analysis 42 2010 1257 1260
39. A.R.V. Roberts, and D.A. Evans Modification of GaAs Schottky diodes by thin organic interlayers Applied Physics Letters 86 2005 072105 072107
40. N.B. Chaure, A.K. Ray, and R. Capan Sol-gel derived nanocrystalline titania thin films on silicon Semiconductor Science and Technology 20 2005 788 792 (Pubitemid 41041269)
41. V. Mikhelashvili, and G. Eisenstein Effects of annealing conditions on optical and electrical characteristics of titanium dioxide films deposited by electron beam evaporation Journal of Applied Physics 89 2001 3256 3269 (Pubitemid 33596789)
42. 2 dielectrics on silicon substrates Applied Physics Letters 69 1996 3860 3862 (Pubitemid 126593073)
43. 2 thin films Journal of Physics: Condensed Matter 18 2006 645 657 (Pubitemid 41816447)
44. T.U. Kampen, A. Schuller, D.R.T. Zahn, B. Biel, J. Ortega, R. Perez, and F. Flores Schottky contacts on passivated GaAs(1 0 0) surfaces: barrier height and reactivity Applied Surface Science 234 2004 341 348
45. A. Bolognesi, A.D. Carlo, P. Lugli, T. Kampen, and D.R.T. Zahn Experimental investigation and simulation of hybrid organic/inorganic Schottky diodes Journal of Physics: Condensed Matter 15 2003 S2719 S2728
46. 3 thin films Journal of Applied Physics 78 1995 6113 6121
47. 3/Pt film capacitors Journal of Applied Physics 92 2002 421 425
48. Y.P. Song, R.L.V. Meirhaeghe, W.H. Laflere, and F. Cardon On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers Solid State Electronics 29 1986 633 638 (Pubitemid 16638496)
49. x/Si Schottky diodes Journal of Materials Science-Materials in Electronics 9 1998 403 407
50. G. Milnes, and D.L. Feucht Heterojunctions and Metal-Semiconductor Junctions 1972 Academic New York
51. B.G. Streetman, and S. Banerjee Solid State Electronic Devices 2000 Prentice Hall New Jersey