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Applied Physics Express

Volumn 4, Issue 10, 2011, Pages

Current transport mechanism of n-TiO2/p-ZnO heterojunction diode

(1) Sönmezoǧlu, Savaş a

a KARAMANOGLU MEHMETBEY UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CONDUCTION MECHANISM; CURRENT MECHANISMS; CURRENT TRANSPORT MECHANISM; CURRENT VOLTAGE; ELECTRICAL CHARACTERISTIC; HETEROJUNCTION DIODES; IDEALITY FACTORS; IV CHARACTERISTICS; RECTIFYING BEHAVIORS; ROOM TEMPERATURE;

DEFECT DENSITY; DIODES; DISTILLATION; ELECTRIC PROPERTIES; HETEROJUNCTIONS; SEMICONDUCTOR DIODES; TITANIUM DIOXIDE; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 80054064944 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.4.104104 Document Type: Article

Times cited : (47)

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