Characterization of current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) features of Al/SiO2/p-Si (MIS) Schottky diodes

Microelectronic Engineering

Volumn 83, Issue 3, 2006, Pages 582-588

  Tataroglu A ^a   Altindal, S ^a  

^a GAZI UNIVERSITY   (Turkey)

Author keywords

Barrier height; Frequency dependence; Insulator layer; Interface states; MIS Schottky diodes

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); NATURAL FREQUENCIES; THERMAL EFFECTS;

BARRIER HEIGHT; FREQUENCY DEPENDENCE; INSULATOR LAYER; INTERFACE STATES; MIS SCHOTTKY DIODES;

DIODES;

EID: 33244470681     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.12.014     Document Type: Article

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