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Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 421-425

Change of conduction mechanism by microstructural variation in Pt/(Ba,Sr)TiO 3/Pt film capacitors

(3) Ahn, Kun Ho a Kim, Sang Sub b Baik, Sunggi a

a Pohang University of Science and Technology (POSTECH) (South Korea)

b Sunchon National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; CURRENT BEHAVIORS; CURRENT MECHANISMS; ENERGY BAND MODELS; FILM CAPACITORS; FOWLER-NORDHEIM TUNNELING; GRANULAR GRAINS; HIGH TEMPERATURE; LOW TEMPERATURES; MICROSTRUCTURAL VARIATION; MICROSTRUCTURE VARIATIONS; POST ANNEALING; PT ELECTRODE; RADIO-FREQUENCY-MAGNETRON SPUTTERING; SCHOTTKY EMISSIONS; SEED LAYER; THIN-FILM CAPACITORS; TIO;

CAPACITORS; EPITAXIAL FILMS; EPITAXIAL GROWTH; LEAKAGE CURRENTS; MICROSTRUCTURE; PLATINUM; THIN FILM CIRCUITS;

INTERFACES (MATERIALS);

EID: 0036639287 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1484233 Document Type: Article

Times cited : (39)

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