Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1603-1608

  Frank, Martin M ^a   Kim, SangBum ^a   Brown, Stephen L ^a   Bruley, John ^a   Copel, Matthew ^a   Hopstaken, Marco ^a   Chudzik, Michael ^a   Narayanan, Vijay ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Field effect transistors; Gate dielectrics; Hafnium oxide; Metal gate electrodes; Oxygen diffusion; Titanium oxide

Indexed keywords

CAPACITANCE-EQUIVALENT THICKNESS; DIELECTRIC CONSTANTS; DIELECTRIC STACK; EQUIVALENT OXIDE THICKNESS; FIXED CHARGES; GATE STACKS; HAFNIUM OXIDE; INTEGRATION SCHEME; INTERFACIAL LAYER; METAL GATE ELECTRODES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MIGRATION PATHWAY; MOS-FET; OXYGEN ATOM; OXYGEN BARRIERS; OXYGEN DIFFUSION; OXYGEN LOSS; POLY-SI; SI OXIDATION; TIN METAL GATE; TIO;

CARRIER MOBILITY; DIELECTRIC MATERIALS; DIFFUSION IN GASES; ELECTRODES; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; METAL FORMING; METALS; MOS CAPACITORS; MOS DEVICES; MOSFET DEVICES; OXIDATION; OXYGEN; PERMITTIVITY; POLYSILICON; REFRACTORY METAL COMPOUNDS; SILICON NITRIDE; SILICON OXIDES; TITANIUM; TITANIUM NITRIDE; TITANIUM OXIDES;

GATE DIELECTRICS;

EID: 67349116358     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.063     Document Type: Article

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