Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures

Microelectronics Journal

Volumn 30, Issue 7, 1999, Pages 673-678

  Akkal, B ^a   Benamara, Z ^a   Bideux, L ^b   Gruzza, B ^b  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; GOLD; INTERFACES (MATERIALS); NUMERICAL ANALYSIS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE TREATMENT; TEMPERATURE;

CAPACITANCE VOLTAGE CHARACTERISTICS; ELECTRICAL PARAMETER VARIATION; SATURATION CURRENT; SERIAL RESISTANCE;

SCHOTTKY BARRIER DIODES;

EID: 0032641950     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(99)00009-9     Document Type: Article

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