Atomic layer deposition of high-k dielectrics on single-walled carbon nanotubes: A Raman study

Nanotechnology

Volumn 24, Issue 24, 2013, Pages

  Liyanage, Luckshitha Suriyasena ^a   Cott, Daire J ^b   Delabie, Annelies ^b,c   Elshocht, Sven Van ^b   Bao, Zhenan ^a   Philip Wong, H S ^a  

^a Stanford University   (United States)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CHANNEL MATERIALS; HIGH-K DIELECTRIC; HIGH-SPEED TRANSISTORS; NUCLEATION AND GROWTH; RAMAN PEAK SHIFTS; TRANSISTOR CHARACTERISTICS; TRANSMISSION ELECTRON MICROSCOPY IMAGES;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; DEPOSITS; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GATE DIELECTRICS; HAFNIUM OXIDES; PHOTOELECTRONS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SINGLE-WALLED CARBON NANOTUBES (SWCN); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

EID: 84878268906     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/24/245703     Document Type: Article

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