A non-iterative compact model for carbon nanotube FETs incorporating source exhaustion effects

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Wei, Lan ^a   Frank, David J ^b   Chang, Leland ^b   Wong, H S Philip ^a  

^a Stanford University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED TECHNOLOGY; BALLISTIC TRANSPORTS; CARBON NANOTUBE FET; COMPACT MODEL; DEVICE CURRENTS; FUNDAMENTAL LIMITS; HIGH CURRENTS; NON-ITERATIVE; OPTIMAL DEVICES; SOURCE ENGINEERING; SYSTEM DESIGN CONSTRAINT; SYSTEM LEVEL OPTIMIZATION;

BALLISTICS; CARBON NANOTUBES; ELECTRON DEVICES;

OPTIMIZATION;

EID: 77952396211     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424281     Document Type: Conference Paper

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