Atomic layer deposited Al 2O 3 dielectrics using ozone functionalization of graphene

2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

Volumn , Issue , 2011, Pages 94-97

  Jandhyala, Srikar ^a   Mordi, Greg ^a   Lee, Bongki ^a,b   Kim, Jiyoung ^a  

^a The University of Texas at Dallas   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; C-V MEASUREMENT; FUNCTIONALIZATIONS; GRAPHENE DEVICES; HIGH-K DIELECTRIC; NUCLEATION SITES; ROOM TEMPERATURE;

ALUMINUM; ELECTRONIC PROPERTIES; GRAPHENE; NANOTECHNOLOGY; OZONE; OZONE LAYER;

ATOMIC LAYER DEPOSITION;

EID: 84860430696     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NMDC.2011.6155319     Document Type: Conference Paper

References (12)

1. S. K. Banerjee, L. F. Register, E. Tutuc, D. Basu, K. Seyoung, D. Reddy and A. H. MacDonald, "Graphene for CMOS and beyond CMOS applications," Proceedings of the IEEE, Vol. 98, pp. 2032-2046, (2010).
2. A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov and A. K. Geim, "The electronic properties of graphene," Rev. Mod. Phys., Vol. 81, pp. 110-162, (2009).
3. K. I. Bolotin, K. J. Sikes, J. Hone, H. L. Stormer and P. Kim, "Temperature-Dependent Transport in Suspended Graphene," Phys. Rev. Lett., Vol. 101, 096802, (2008)
4. L. Liao and X. Duan, "Graphene-dielectric integration for graphene transistors," Materials Science and Engineering: R: Reports 70, pp. 354-370, (2010).
5. W. J. Zhu, D. Neumayer, V. Perebeinos and P. Avouris, "Silicon Nitride Gate Dielectrics and Band Gap Engineering in Graphene Layers," Nano Lett., Vol. 10, pp. 3572-3576, (2010).
6. 3 dielectric," Appl. Phys. Lett., Vol. 94, 062107, (2009).
7. 3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics," Appl. Phys. Lett., Vol. 92, 203102, (2008).
8. 3dielectric using ozone-based atomic layer deposition for dual-gated graphene devices," Appl. Phys. Lett., Vol. 97, 043107, (2010).
9. A. Das, S. Pisana, B. Chakraborty, S. Piscanec, S. K. Saha, U. V. Waghmare, K. S. Novoselov, H. R. Krishnamurthy, A. K. Geim, A. C. Ferrari and A. K. Sood, "Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor," Nat. Nano., Vol. 3, pp. 210-215, (2008).
10. D. M. Basko, S. Piscanec and A. C. Ferrari, "Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene," Phys. Rev. B, Vol. 80, 165413, (2009)
11. C. Zhihong and J. Appenzeller, "Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices," presented at the Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 2008 (unpublished)
12. 3 Atomic Layer Deposition," Chem. of Mat., Vol. 16, pp. 639-645, (2004).