ALD of Al 2O 3 for carbon nanotube vertical interconnect and its impact on the electrical properties

Materials Research Society Symposium Proceedings

Volumn 1283, Issue , 2011, Pages 46-54

  Chiodarelli, Nicolo' ^b   Delabie, Annelies ^a   Masahito, Sugiura ^c   Kashiwagi, Yusaku ^c   Richard, Olivier ^a   Bender, Hugo ^a   Cott, D J ^a   Heyns, Marc ^b   De Gendt, Stefan ^b   Groeseneken, Guido ^b   Vereecken, Philippe M ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS COMPATIBLE; CU-BASED; DEPOSITION TECHNIQUE; ELECTRICAL CHARACTERISTIC; FUTURE GENERATIONS; GROWTH MODES; HIGH ASPECT RATIO; HIGH QUALITY; INTERCONNECT STRUCTURES; INTERCONNECT TEST STRUCTURES; OXIDATIVE CONDITIONS; OXIDIZING CONDITIONS; POLISHING STEPS; PROCESS STEPS;

ASPECT RATIO; ATOMIC LAYER DEPOSITION; CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; SILICON COMPOUNDS;

ELECTRIC PROPERTIES;

EID: 84859068962     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2011.727     Document Type: Conference Paper

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