Light from germanium tin heterostructures on silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8628, Issue , 2013, Pages

  Kasper, E ^a   Kittler, M ^b   Oehme, M ^a   Arguirov, T ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Electroluminescence; Germanium tin; GeSn; Infrared emission; Light emitting diode; Optical properties; Photonics; Silicon substrate

Indexed keywords

EMISSION WAVELENGTH; GERMANIUM TINS; GESN; INDIRECT SEMICONDUCTOR; INFRARED EMISSIONS; OPTICAL CHARACTERIZATION TECHNIQUE; PHOTON EMISSIONS; SILICON SUBSTRATES;

ELECTROLUMINESCENCE; GERMANIUM; INTEGRATED OPTOELECTRONICS; OPTICAL PROPERTIES; PHOTONICS; TIN;

LIGHT EMITTING DIODES;

EID: 84878183786     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.2006594     Document Type: Conference Paper

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