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Volumn 97, Issue 4, 2005, Pages

Sn-mediated Ge/Ge(001) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness

(7) Bratland, K A b Foo, Y L c Spila, T a Seo, H S a Haasch, R T a Desjardins, P d Greene, J E a

a University of Illinois at Urbana Champaign (United States)

b IBM T J WATSON RESEARCH CENTER (United States)

c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

d ÉCOLE POLYTECHNIQUE DE MONTRÉAL (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; EPITAXIAL BREAKDOWN; EPITAXIAL THICKNESS; SURFACE SEGGREGATION;

CONCENTRATION (PROCESS); DOPING (ADDITIVES); FILMS; GERMANIUM; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS; THICKNESS MEASUREMENT; TIN;

MOLECULAR BEAM EPITAXY;

EID: 13844255548 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1848188 Document Type: Article

Times cited : (53)

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