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Volumn 108, Issue 3, 2010, Pages

Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; AUGER ELECTRON; BAND OFFSETS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DETAILED MODELING; DIRECT BAND GAP; DOUBLE HETEROSTRUCTURES; ELECTRICALLY PUMPED; FABRY-PEROT CAVITY; GAIN PROFILES; GROUP-IV SEMICONDUCTORS; HETEROSTRUCTURES; INJECTION LASER DIODES; LASER THRESHOLD CURRENT; LATTICE-MATCHED; MIDINFRARED LASERS; MIDWAVE INFRARED; NON-RADIATIVE LIFETIMES; P-TYPE; RADIATIVE LIFETIME; ROOM-TEMPERATURE OPERATION; SILICON ON INSULATOR; SILICON-BASED; STRAIN-FREE;

EID: 77955903384     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3467766     Document Type: Article
Times cited : (167)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.