Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 342-346

  Vincent, B ^a   Shimura, Y ^b,c   Takeuchi, S ^b,g   Nishimura, T ^b   Eneman, G ^a,e,f   Firrincieli, A ^a   Demeulemeester, J ^d   Vantomme, A ^d   Clarysse, T ^a   Nakatsuka, O ^b   Zaima, S ^b   Dekoster, J ^a   Caymax, M ^a   Loo, R ^a  

^a IMEC   (Belgium)

^b NAGOYA UNIVERSITY   (Japan)

^c JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

^d KU LEUVEN   (Belgium)

^e UNIVERSITY OF LEUVEN   (Belgium)

^f RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

^g Covalent Silicon Corporation   (Japan)

Author keywords

B implantation in GeSn; GeSn materials; GeSn thermal budget; NiGeSn formation; Source drain engineering; Strained Ge pMOSFETs

Indexed keywords

B IMPLANTATION; GESN MATERIALS; GESN THERMAL BUDGET; NIGESN FORMATION; SOURCE/DRAIN ENGINEERING; STRAINED-GE;

BUDGET CONTROL; MATERIALS; MOSFET DEVICES; TIN;

GERMANIUM;

EID: 79751534826     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.10.025     Document Type: Conference Paper

References (15)

1. S.E. Thompson, G. Sun, K. Wu, J. Lim, and T. Nishida IEDM Tech. Dig. 2004 221
2. D.A. Antoniadis, and A. Khakifirooz IEDM Tech. Dig. 2008
3. C.O. Chui, H. Kim, D. Chi, B.B. Triplett, P. McIntyre, and K.C. Saraswat IEDM Tech. Dig. 2002 437
4. P. Zimmerman, G. Nicholas, B. De Jaeger, B. Kaczer, A. Stesmans, L.-A. Ragnarsson, D.P. Brunco, F.E. Leys, M. Caymax, G. Winderickx, K. Opsomer, M. Meuris, and M.M. Heyns IEDM Tech. Dig. 2006
5. J. Mitard, B. De Jaeger, F.E. Leys, G. Hellings, K. Martens, G. Eneman, D.P. Brunco, R. Loo, D. Shamiryan, T. Vandeweyer, G. Winderickx, E. Vrancken, K. De Meyer, M. Caymax, L. Pantisano, M. Meuris, and M.M. Heyns IEDM Tech. Dig. 2008
6. G.H. Wang, E.-H. Toh, X. Wang, D.H.L. Seng, S. Tripathy, T. Osipowicz, T.K. Chan, K.M. Hoe, S. Balakumar, C.H. Tung, G.-Q. Lo, G. Samudra, and Y.-C. Yeo IEDM Tech. Dig. 2007 131
7. R. Loo, G. Wang, L. Souriau, J.C. Lin, S. Takeuchi, G. Brammertz, and M. Caymax J. Elect. Soc. 157 2010 H13 H21
8. J. Kouvetakis Annual Review of Materials Research 36 2006
9. G. Eneman, E. Simoen, P. Verheyen, and K. De Meyer IEEE Trans. Electr. Dev. 55 10 2008 2703
10. Taurus TSUPREM-4 Taurus Process Reference Manual, Synopsys, Mountain View, CA, 2005, X-2005.10.
11. S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima Semicond. Sci. Tech. 22 1 2007 S231 S235
12. A. Satta, E. Simoen, T. Clarysse, T. Janssens, A. Benedetti, B. De Jaeger, M. Meuris, and W. Vandervorst Appl. Phys. Lett. 27 2005 172109
13. D.H. Petersen, O. Hansen, T.B. Hansen, P. Boggild, R. Lin, D. Kjaer, P.F. Nielsen, T. Clarysse, W. Vandervorst, E. Rosseel, N.S. Bennett, and N.E.B. Cowern J. Vac. Sci. Technol. B 28 2010 C1C27
14. S. Gaudet, C. Detavernier, C. Lavoie, and P. Desjardins J. Appl. Phys. 100 2006 034306
15. S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, A. Sakai, and S. Zaima ECS Transactions 33 6 2010 529 535