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Volumn 520, Issue 8, 2012, Pages 3361-3364

Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si

Author keywords

Raman spectroscopy; Ge photodetector; GeSn Epitaxie

Indexed keywords

1550 NM; BAND GAP REDUCTION; GE DETECTORS; GEOMETRICAL DIMENSIONS; GESN EPITAXIE; LOW TEMPERATURE GROWTH; MESA STRUCTURE; MOLE FRACTION; OPTICAL MEASUREMENT; OPTICAL RESPONSIVITIES; P-I-N PHOTODETECTORS; RESPONSIVITY; SI SUBSTRATES; SUPER CONTINUUM;

EID: 84857059558     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.111     Document Type: Conference Paper
Times cited : (26)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.