Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions

Applied Physics Letters

Volumn 90, Issue 25, 2007, Pages

  Sun, G ^a   Cheng, H H ^b   Menendez J ^c   Khurgin, J B ^d   Soref, R A ^e  

^a UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c ARIZONA STATE UNIVERSITY   (United States)

^d Johns Hopkins University   (United States)

^e AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY VALLEYS; ROOM TEMPERATURE OPERATION; SILICON SUBSTRATES; THRESHOLD CURRENT;

BAND STRUCTURE; ELECTRIC CURRENT CONTROL; ELECTRON TRANSITIONS; PHONONS; QUANTUM ELECTRONICS; SEMICONDUCTING GERMANIUM;

SEMICONDUCTOR LASERS;

EID: 34547270635     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2749844     Document Type: Article

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