Surface photovoltage in undoped n-type GaN

Journal of Applied Physics

Volumn 107, Issue 11, 2010, Pages

  Reshchikov, M A ^a   Foussekis, M ^a   Baski, A A ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR AMBIENT; ANALYTICAL EXPRESSIONS; BAND GAPS; EMISSION OF ELECTRON; FREE ELECTRON; ILLUMINATION INTENSITY; IN-VACUUM; KELVIN PROBE; LOGARITHMIC DECAY; NEAR-SURFACE; PHENOMENOLOGICAL MODELS; PHOTOGENERATED HOLES; PHOTOINDUCED PROCESS; PHOTON ENERGY; ROOM TEMPERATURE; SURFACE OXIDE LAYER; SURFACE PHOTOVOLTAGES; SURFACE STATE;

GALLIUM ALLOYS; GALLIUM NITRIDE; SURFACE PROPERTIES;

HETEROJUNCTIONS;

EID: 77953628702     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3430979     Document Type: Article

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56. 2 of the surface every second, in contrast to the ≈ 1015 holes reaching the surface every second under illumination with 365 nm light and the same power density.