메뉴 건너뛰기




Volumn 84, Issue 20, 2011, Pages

Size-dependent persistent photocurrent and surface band bending in m-axial GaN nanowires

Author keywords

[No Author keywords available]

Indexed keywords


EID: 82755195649     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.205443     Document Type: Article
Times cited : (51)

References (44)
  • 1
    • 28144437037 scopus 로고    scopus 로고
    • Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes
    • DOI 10.1021/nl051689e
    • F. Qian, S. Gradecak, Y. Li, C. Y. Wen, and C. M. Lieber, Nano. Lett. 1530-6984 10.1021/nl051689e 5, 2287 (2005). (Pubitemid 41698954)
    • (2005) Nano Letters , vol.5 , Issue.11 , pp. 2287-2291
    • Qian, F.1    Gradecak, S.2    Li, Y.3    Wen, C.-Y.4    Lieber, C.M.5
  • 4
    • 0035827304 scopus 로고    scopus 로고
    • Room-temperature ultraviolet nanowire nanolasers
    • DOI 10.1126/science.1060367
    • M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Fang, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science SCIEAS 0036-8075 10.1126/science.1060367 292, 1897 (2001). (Pubitemid 32538361)
    • (2001) Science , vol.292 , Issue.5523 , pp. 1897-1899
    • Huang, M.H.1    Mao, S.2    Feick, H.3    Yan, H.4    Wu, Y.5    Kind, H.6    Weber, E.7    Russo, R.8    Yang, P.9
  • 5
    • 33746893026 scopus 로고    scopus 로고
    • Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors
    • DOI 10.1021/nl060849z
    • Y. Li, J. Xiang, F. Qian, S. Gradecak, Y. Fang, Y. Wu, H. Yan, D. A. Blom, and C. M. Lieber, Nano. Lett. 1530-6984 10.1021/nl060849z 6, 1468 (2006). (Pubitemid 44195330)
    • (2006) Nano Letters , vol.6 , Issue.7 , pp. 1468-1473
    • Li, Y.1    Xiang, J.2    Qian, F.3    Gradecak, S.4    Wu, Y.5    Yan, H.6    Blom, D.A.7    Lieber, C.M.8
  • 14
    • 0000821188 scopus 로고    scopus 로고
    • The origin of persistent photoconductivity and its relationship with yellow luminescence in molecular beam epitaxy grown undoped GaN
    • DOI 10.1063/1.121769, PII S0003695198029283
    • C. V. Reddy, K. Balakrishan, H. Okumura, and S. Yoshida, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.121769 73, 244 (1998). (Pubitemid 128673740)
    • (1998) Applied Physics Letters , vol.73 , Issue.2 , pp. 244-246
    • Reddy, C.V.1    Balakrishnan, K.2    Okumura, H.3    Yoshida, S.4
  • 17
    • 0030107611 scopus 로고    scopus 로고
    • Metastability and persistent photoconductivity in Mg-doped p-type GaN
    • DOI 10.1063/1.116020, PII S0003695196009138
    • C. Johnson, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.116020 68, 1808 (1996). (Pubitemid 126688392)
    • (1996) Applied Physics Letters , vol.68 , Issue.13 , pp. 1808-1810
    • Johnson, C.1    Lin, J.Y.2    Jiang, H.X.3    Khan, M.A.4    Sun, C.J.5
  • 18
    • 32944456302 scopus 로고    scopus 로고
    • Electric-field effects on persistent photoconductivity in undoped n-type epitaxial GaN
    • DOI 10.1063/1.2174841
    • J. Xu, D. Yu, Y. Tang, Y. Kang, X. Li, X. Li, and H. Gong, Appl. Phys. Lett. 0003-6951 10.1063/1.2174841 88, 072106 (2006). (Pubitemid 43261818)
    • (2006) Applied Physics Letters , vol.88 , Issue.7 , pp. 072106
    • Xu, J.1    You, D.2    Tang, Y.3    Kang, Y.4    Li, X.5    Li, X.6    Gong, H.7
  • 19
    • 82755165755 scopus 로고    scopus 로고
    • See Supplemental Material at for the characterization of GaN NB device
    • See Supplemental Material at http://link.aps.org/supplemental/10.1103/ PhysRevB.84.205443 for the characterization of GaN NB device.
  • 25
    • 31944437025 scopus 로고    scopus 로고
    • Specific contact resistivity of nanowire devices
    • DOI 10.1063/1.2163454, 053106
    • E. Stern, G. Cheng, M. P. Young, and M. A. Reed, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2163454 88, 053106 (2006). (Pubitemid 43190901)
    • (2006) Applied Physics Letters , vol.88 , Issue.5 , pp. 1-3
    • Stern, E.1    Cheng, G.2    Young, M.P.3    Reed, M.A.4
  • 26
    • 0142075255 scopus 로고    scopus 로고
    • Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections
    • DOI 10.1021/nl034422t
    • T. Kuykendall, P. Pauzauskie, S. Lee, Y. Zhang, J. Goldberger, and P. Yang, Nano. Lett. 1530-6984 NALEFD 1530-6984 10.1021/nl034422t 3, 1063 (2003). (Pubitemid 37289296)
    • (2003) Nano Letters , vol.3 , Issue.8 , pp. 1063-1066
    • Kuykendall, T.1    Pauzauskie, P.2    Lee, S.3    Zhang, Y.4    Goldberger, J.5    Yang, P.6
  • 27
    • 0000823384 scopus 로고    scopus 로고
    • Gallium Nitride Nanowire Nanodevices
    • DOI 10.1021/nl015667d
    • Y. Huang, X. Duan, Y. Cui, and C. M. Lieber, Nano. Lett. 1530-6984 10.1021/nl015667d 2, 101 (2002). (Pubitemid 135706272)
    • (2002) Nano Letters , vol.2 , Issue.2 , pp. 101-104
    • Huang, Y.1    Duan, X.2    Cui, Y.3    Lieber, C.M.4
  • 35
    • 6144261628 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.362677
    • M. Razeghi and A. Rogalski, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.362677 79, 7433 (1996).
    • (1996) J. Appl. Phys. , vol.79 , pp. 7433
    • Razeghi, M.1    Rogalski, A.2
  • 36
    • 0031124281 scopus 로고    scopus 로고
    • APPLAB 0003-6951 10.1063/1.118799
    • C. H. Qiu and J. I. Pankove, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118799 70, 1983 (1997).
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 1983
    • Qiu, C.H.1    Pankove, J.I.2
  • 37
    • 0036920883 scopus 로고    scopus 로고
    • Surface potential at as-grown GaN(0001) MBE layers
    • DOI 10.1002/1521-3951(200212)234:3<773::AID-PSSB773>3.0.CO;2-0
    • M. Kocan, A. Rizzi, H. Luth, S. Keller, and U. K. Mishra, Phys. Status Solid. B PSSBBD 0370-1972 10.1002/1521-3951(200212)234:3<773::AID- PSSB773>3.0.CO;2-0 234, 773 (2002). (Pubitemid 36027896)
    • (2002) Physica Status Solidi (B) Basic Research , vol.234 , Issue.3 , pp. 773-777
    • Kocan, M.1    Rizzi, A.2    Luth, H.3    Keller, S.4    Mishra, U.K.5
  • 38
    • 34547139381 scopus 로고    scopus 로고
    • PRBMDO 1098-0121 10.1103/PhysRevB.66.121308
    • J. P. Long and V. M. Bermudez, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.66.121308 66, 121308 (2002).
    • (2002) Phys. Rev. B , vol.66 , pp. 121308
    • Long, J.P.1    Bermudez, V.M.2
  • 39
    • 0035672928 scopus 로고    scopus 로고
    • Electrostatic force microscopy: Principles and some applications to semiconductors
    • DOI 10.1088/0957-4484/12/4/321, PII S0957448401267804
    • P. Girard, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/12/4/321 12, 485 (2001). (Pubitemid 34047153)
    • (2001) Nanotechnology , vol.12 , Issue.4 , pp. 485-490
    • Girard, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.