Injection-level-dependent internal quantum efficiency and lasing in low-defect GaN nanowires

Journal of Applied Physics

Volumn 109, Issue 4, 2011, Pages

  Schlager, John B ^a   Sanford, Norman A ^a   Bertness, Kris A ^a   Roshko, Alexana ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK MATERIALS; CARRIER RECOMBINATION; FLUENCES; GAN NANOWIRES; INJECTED CARRIERS; INJECTION LEVELS; INTERNAL QUANTUM EFFICIENCY; LASING THRESHOLD; OPTICALLY PUMPED; PL LIFETIME; RADIATIVE RECOMBINATION; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; TEMPERATURE-DEPENDENT MEASUREMENTS; TIME-RESOLVED PHOTOLUMINESCENCE; ULTRASHORT EXCITATION PULSE;

GALLIUM ALLOYS; GALLIUM NITRIDE; NANOWIRES;

QUANTUM EFFICIENCY;

EID: 79952162508     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3553418     Document Type: Article

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