A comparative study on electroluminescence from ZnO-based double heterojunction light emitting diodes grown on different lattice mismatch substrates

Journal of Alloys and Compounds

Volumn 575, Issue , 2013, Pages 233-238

  Li, Yongfeng ^a,b   Yao, Bin ^a,b   Deng, Rui ^c   Li, Binghui ^b   Zhang, Zhenzhong ^b   Shan, Chongxin ^b   Zhao, Dongxu ^b   Shen, Dezhen ^b  

^a JILIN UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

^c CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Lattice mismatch; Light emitting diode; Molecular beam epitaxy; ZnO

Indexed keywords

DIODES; ELECTRIC RECTIFIERS; ELECTROLUMINESCENCE; HETEROJUNCTIONS; LATTICE MISMATCH; LIGHT; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; THRESHOLD VOLTAGE; ZINC OXIDE;

COMPARATIVE STUDIES; DEEP LEVEL EMISSION; DOUBLE HETEROJUNCTIONS; GAN SUBSTRATE; LATTICE-MISMATCHED; SI SUBSTRATES; ULTRAVIOLET EMISSION; VISIBLE EMISSIONS;

LIGHT EMITTING DIODES;

EID: 84877618344     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.04.036     Document Type: Article

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