Growth and structural characterization of intrinsic, acceptor, and donor doped (Mg,Zn)O epilayers via metalorganic vapor phase epitaxy on (1 0 1̄ 0) ZnO substrates

Journal of Crystal Growth

Volumn 325, Issue 1, 2011, Pages 20-26

  Pierce, J M ^a,b   Wen, H ^a   Liu, K ^a   Kumrr, M ^a   Tresback, J ^a   Ali, Y S ^a   Krahnert, A ^a   Adekore, B T ^a  

^a LumenZ Inc   (United States)

^b Apt 308 ^*  (United States)

Author keywords

A1. Doping; A1. Planar defects; A1. X ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. MgxZn1 xO; B1. ZnO

Indexed keywords

A1. DOPING; B1. MGXZN1-XO; METAL-ORGANIC VAPOR PHASE EPITAXY; PLANAR DEFECT; ZNO;

ATOMIC FORCE MICROSCOPY; DEFECTS; DIFFRACTION; EPILAYERS; EPITAXIAL FILMS; EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ORGANOMETALLICS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; STACKING FAULTS; STRUCTURAL ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 79958711695     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.03.001     Document Type: Article

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