P-Type MgZnO thin films grown using N delta-doping by plasma-assisted molecular beam epitaxy

Journal of Alloys and Compounds

Volumn 504, Issue 2, 2010, Pages 484-487

  Liu, W W ^a,b   Yao, B ^a   Li, Y F ^a,b   Li, B H ^a   Zhang, Z Z ^a   Shan, C X ^a   Zhang, J Y ^a   Shen, D Z ^a   Fan, X W ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Doping; MgZnO thin film; p Type; Zn3N2

Indexed keywords

C-PLANE SAPPHIRE; DELTA-DOPING; DOPING TECHNIQUES; LAYER STRUCTURES; LOW GROWTH TEMPERATURE; MGZNO THIN FILM; N-DOPED; N-TYPE CONDUCTIVITY; P-TYPE; P-TYPE CONDUCTIVITY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; TEMPERATURE RANGE;

CRYSTAL GROWTH; GROWTH TEMPERATURE; HOLE CONCENTRATION; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; THIN FILMS; VAPOR DEPOSITION; ZINC;

DOPING (ADDITIVES);

EID: 77955432223     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.05.148     Document Type: Article

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