Role of donor-acceptor complexes and impurity band in stabilizing ferromagnetic order in Cu-doped SnO 2 thin films

Applied Physics Letters

Volumn 100, Issue 17, 2012, Pages

  Li, Yongfeng ^a,b   Deng, Rui ^c   Tian, Yufeng ^a   Yao, Bin ^b   Wu, Tom ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b JILIN UNIVERSITY   (China)

^c CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CU-DOPED; DEFECT COMPLEX; DONOR-ACCEPTOR COMPLEX; DONOR-ACCEPTOR PAIRS; ELECTRONIC STRUCTURE CALCULATIONS; FERROMAGNETIC COUPLING; FERROMAGNETIC ORDERS; FIRST PRINCIPLES METHOD; FORMATION ENERGIES; IMPURITY BANDS; INTRINSIC DEFECTS; PHOTOLUMINESCENCE MEASUREMENTS; SPIN-POLARIZED; WIDE BAND GAP;

CALCULATIONS; DEFECTS; ELECTRONIC STRUCTURE; ENERGY GAP; FERROMAGNETIC MATERIALS; FERROMAGNETISM; THIN FILMS;

DOPING (ADDITIVES);

EID: 84860330424     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4705419     Document Type: Article

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