Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule

NPG Asia Materials

Volumn 4, Issue 11, 2012, Pages

  Li, Yongfeng ^a,b   Yin, Wanjian ^c   Deng, Rui ^a,d   Chen, Rui ^a   Chen, Jing ^e   Yan, Qingyu ^e   Yao, Bin ^b   Sun, Handong ^a   Wei, Su Huai ^c   Wu, Tom ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b JILIN UNIVERSITY   (China)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^d CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^e NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Dipole forbidden rule; Electroluminescence; First principles calculations; Light emitting diode; Photoluminescence; Tin dioxide

Indexed keywords

DIPOLE-FORBIDDEN RULE; FIRST-PRINCIPLES CALCULATION; LOW TEMPERATURE ANNEALING; NANO-CRYSTALLINE STRUCTURES; OPTICAL APPLICATIONS; OXIDE SEMICONDUCTOR; ULTRAVIOLET LIGHT-EMITTING DIODES; UV PHOTOLUMINESCENCE;

CALCULATIONS; ELECTROLUMINESCENCE; ENERGY GAP; PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS; THIN FILMS; TIN DIOXIDE; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 84870977019     PISSN: 18844049     EISSN: 18844057     Source Type: Journal    
DOI: 10.1038/am.2012.56     Document Type: Article

References (46)

1. Look, D. C., Hemsky, J. W. & Sizelove, J. R. Residual native shallow donor in ZnO. Phys. Rev. Lett. 82, 2552-2555 (1999).
2. Walsh, A., Da Silva, J. L. F., Wei, S.-H., Kǒrber, C., Klein, A., Piper, L. F. J., DeMasi, A., Smith, K. E., Panaccione, G., Torelli, P., Payne, D. J., Bourlange, A. & Egdell, R. G. Nature of the band gap of In2O3 revealed by first-principles calculations and X-ray spectroscopy. Phys. Rev. Lett. 100, 167402 (2008).
3. Li, Y. F., Deng, R., Yao, B., Xing, G. Z., Wang, D. D. & Wu, T. Tuning ferromagnetism in MgxZn1-xO thin films by band gap and defect engineering. Appl. Phys. Lett. 97, 102506 (2010).
4. Jain, M., Chelikowsky, J. R. & Louie, S. G. Quasiparticle excitations and charge transition levels of oxygen vacancies in Hafnia. Phys. Rev. Lett. 107, 216803 (2011).
5. Peng, H. Y., Li, Y. F., Lin, W. N., Wang, Y. Z., Gao, X. Y. & Wu, T. Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation. Sci. Rep. 2, 442 (2012).
6. Batzill, M. & Diebold, U. The surface and materials science of tin oxide. Prog. Surf. Sci. 79, 47-154 (2005).
7. Vinodgopal, K., Bedja, I. & Kamat, P. V. Nanostructured semiconductor films for photocatalysis. Photoelectrochemical behavior of SnO2/TiO2 composite systems and its role in photocatalytic degradation of a textile Azo dye. Chem. Mater. 8, 2180-2187 (1996).
8. Harrison, P. G. & Willett, M. J. The mechanism of operation of tin(iv) oxide carbon monoxide sensors. Nature 332, 337-339 (1988).
9. Kowal, A., Li, M., Shao, M., Sasaki, K., Vukmirovic, M. B., Zhang, J., Marinkovic, N. S., Liu, P., Frenkel, A. I. & Adzic, R. R. Ternary Pt/Rh/SnO2 electrocatalysts for oxidizing ethanol to CO2. Nat. Mater. 8, 325-330 (2009).
10. Zhang, Z., Gao, J., Wong, L. M., Tao, J. G., Liao, L., Zheng, Z., Xing, G. Z., Peng, H. Y., Yu, T., Shen, Z. X., Huan, C. H. A., Wang, S. J. & Wu, T. Morphologycontrolled synthesis and a comparative study of the physical properties of SnO2 nanostructures: from ultrathin nanowires to ultrawide nanobelts. Nanotechnology 20, 135605 (2009).
11. Qian, J., Liu, P., Xiao, Y., Jiang, Y., Cao, Y., Ai, X. & Yang, H. TiO2-coated multilayered SnO2 hollow microspheres for dye-sensitized solar cells. Adv. Mater. 21, 3663-3667 (2009).
12. Snaith, H. J. & Ducati, C. SnO2-based dye-sensitized hybrid solar cells exhibiting near unity absorbed photon-to-electron conversion efficiency. Nano Lett. 10, 1259-1265 (2010).
13. Li, Y., Deng, R., Tian, Y., Yao, B. & Wu, T. Role of donor-acceptor complexes and impurity band in stabilizing ferromagnetic order in Cu-doped SnO2 thin films. Appl. Phys. Lett. 100, 172402 (2012).
14. Yu, B., Zhu, C. & Gan, F. Exciton spectra of SnO2 nanocrystals with surficial dipole layer. Opt. Mater. 7, 15-20 (1997).
15. Agekyan, V. T. Spectroscopic properties of semiconductor crystals with direct forbidden energy gap. Phys. Status Solidi A 43, 11-42 (1977).
16. Frǒhlich, D., Kenklies, R. & Helbig, R. Band-gap assignment in SnO2 by two-photon spectroscopy. Phys. Rev. Lett. 41, 1750-1751 (1978).
17. Hu, J. Q., Ma, X. L., Shang, N. G., Xie, Z. Y., Wong, N. B., Lee, C. S. & Lee, S. T. Large-scale rapid oxidation synthesis of SnO2 nanoribbons. J. Phys. Chem. B 106, 3823-3826 (2002).
18. Hu, J., Bando, Y., Liu, Q. & Golberg, D. Laser-ablation growth and optical properties of wide and long single-crystal SnO2 ribbons. Adv. Func. Mater. 13, 493-496 (2003).
19. Faglia, G., Baratto, C., Sberveglieri, G., Zha, M. & Zappettini, A. Adsorption effects of NO2 at ppm level on visible photoluminescence response of SnO2 nanobelts. Appl. Phys. Lett. 86, 011923 (2005).
20. He, J. H., Wu, T., Hsin, C., Li, K., Chen, L., Chueh, Y., Chou, L. & Wang, Z. Beaklike SnO2 nanorods with strong photoluminescent and field-emission properties. Small 2, 116-120 (2006).
21. Luo, S., Fan, J., Liu, W., Zhang, M., Song, Z., Lin, C., Wu, X. & Chu, P. K. Synthesis and low-temperature photoluminescence properties of SnO2 nanowires and nanobelts. Nanotechnology 17, 1695-1699 (2006).
22. Zhou, J. X., Zhang, M. S., Hong, J. M. & Yin, Z. Raman spectroscopic and photoluminescence study of single-crystalline SnO2 nanowires. Solid State Commun. 138, 242-246 (2006).
23. Luo, S., Chu, P. K., Liu, W., Zhang, M. & Lin, C. Origin of low-temperature photoluminescence from SnO2 nanowires fabricated by thermal evaporation and annealed in different ambients. Appl. Phys. Lett. 88, 183112 (2006).
24. Lettieri, S., Causá, M., Setaro, A., Trani, F., Barone, V., Ninno, D. & Maddalena, P. Direct role of surface oxygen vacancies in visible light emission of tin dioxide nanowires. J. Chem. Phys. 129, 244710 (2008).
25. Lettieri, S., Setaro, A., Baratto, C., Comini, E., Faglia, G., Sberveglieri, G. & Maddalena, P. On the mechanism of photoluminescence quenching in tin dioxide nanowires by NO2 adsorption. New J. Phys. 10, 043013 (2008).
26. Blattner, G., Klingshirn, C. & Helbig, R. Impurity transitions in the photoluminescence spectra of SnO2. Solid State Commun. 33, 341-344 (1980).
27. Jeong, J., Choi, S.-P., Chang, C. I., Shin, D. C., Park, J. S., Lee, B. T., Park, Y.-J. & Song, H.-J. Photoluminescence properties of SnO2 thin films grown by thermal CVD. Solid State Commun. 127, 595-597 (2003).
28. Chen, R., Xing, G. Z., Gao, J., Zhang, Z., Wu, T. & Sun, H. D. Characteristics of ultraviolet photoluminescence from high quality tin oxide nanowires. Appl. Phys. Lett. 95, 061908 (2009).
29. Kar, A., Stroscio, M. A., Dutta, M., Kumari, J. & Meyyappan, M. Observation of ultraviolet emission and effect of surface states on the luminescence from tin oxide nanowires. Appl. Phys. Lett. 94, 101905 (2009).
30. Yang, H. Y., Yu, S. F., Lau, S. P., Tsang, S. H., Xing, G. Z. & Wu, T. Ultraviolet coherent random lasing in randomly assembled SnO2 nanowires. Appl. Phys. Lett. 94, 241121 (2009).
31. Yang, H. Y., Yu, S. F., Tsang, S. H., Chen, T. P., Gao, J. & Wu, T. High temperature excitonic lasing characteristics of randomly assembled SnO2 nanowires. Appl. Phys. Lett. 95, 131106 (2009).
32. Yuan, Z. Z., Li, D. S., Wang, M. H., Chen, P. L., Gong, D. R., Cheng, P. H. & Yang, D. R. Electroluminescence of SnO2/p-Si heterojunction. Appl. Phys. Lett. 92, 121908 (2008).
33. Wang, Y., Ma, J., Ji, F., Yu, X. & Ma, H. Structural and photoluminescence characters of SnO2:Sb films deposited by RF magnetron sputtering. J. Lumin. 114, 71-76 (2005).
34. Kresse, G. & Furthmǔller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169-11186 (1996).
35. Blǒchl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953-17979 (1994).
36. Adolph, B., Furthmǔller, J. & Bechstedt, F. Optical properties of semiconductors using projector-augmented waves. Phys. Rev. B 63, 125108 (2001).
37. Ristic, M., Ivanda, M., Popovic, S. & Music, S. Dependence of nanocrystalline SnO2 particle size on synthesis route. J. Non-Cryst. Solids 303, 270-280 (2002).
38. Dieguez, A., Romano-Rodriguez, A., Vila, A. & Morante, J. R. The complete Raman spectrum of nanometric SnO2 particles. J. Appl. Phys. 90, 1550-1557 (2001).
39. Liu, B., Cheng, C. W., Chen, R., Shen, Z. X., Fan, H. J. & Sun, H. D. Fine structure of ultraviolet photoluminescence of tin oxide nanowires. J. Phys. Chem. C 114, 3407-3410 (2010).
40. Walsh, A., Da Silva, J. L. F. & Wei, S.-H. Interplay between order and disorder in the high performance of amorphous transparent conducting oxides. Chem. Mater. 21, 5119-5124 (2009).
41. Deng, H.-X., Li, S.-S., Li, J. & Wei, S.-H. Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures. Phys. Rev. B 85, 195382 (2012).
42. Chen, X., Liu, L., Yu, P. Y. & Mao, S. S. Increasing solar absorption for photocatalysis with black hydrogenated titanium dioxide nanocrystals. Science 331, 746-750 (2011).
43. Pimputkar, S., Speck, J. S., DenBaars, S. P. & Nakamura, S. Prospects for LED lighting. Nat. Photon. 3, 180-182 (2009).
44. Islam, M. N. & Hakim, M. O. Electron affinity and work function of polycrystalline SnO2 thin film. J. Mater. Sci. Lett. 5, 63-65 (1986).
45. Qiao, D., Yu, L. S., Lau, S. S., Redwing, J. M., Lin, J. Y. & Jiang, H. X. Dependence of Ni/ AlGaN Schottky barrier height on Al mole fraction. J. Appl. Phys. 87, 801-804 (2000).
46. Thomas, R. E., Gibson, J. W. & Haas, G. A. Low energy electron reflection (LEER) and electron affinity of MgO. Appl. Surf. Sci. 5, 398-405 (1980).