SCOPUS 정보 검색 플랫폼

Volumn 552, Issue , 2013, Pages 304-309

A study on electrical transport vis-à-vis the effect of thermal annealing on the p-type conductivity in arsenic-doped MOCVD grown ZnO in the temperature range 10-300 K

(3) Biswas, Pranab a Kundu, Souvik a Banerji, P a

a INDIAN INSTITUTE OF TECHNOLOGY (India)

Author keywords

Deposition; Diffusion; Electronic transport; Semiconductors; Vapor

Indexed keywords

ANNEALING; ARSENIC; CARRIER TRANSPORT; DEPOSITION; DIFFUSION; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; VAPORS; ZINC OXIDE;

CHARGE TRANSPORT MECHANISMS; DOPING CONCENTRATION; ELECTRICAL TRANSPORT; ELECTRONIC TRANSPORT; POST DEPOSITION ANNEALING; SEMI-INSULATING GAAS; TEMPERATURE DEPENDENT; VARIABLE RANGE HOPPING;

CARRIER CONCENTRATION;

EID: 84869878750 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2012.10.097 Document Type: Article

Times cited : (9)

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