Ultraviolet photodiode based on p-Mg0.2Zn0.8O/n-ZnO heterojunction with wide response range

Journal of Physics D: Applied Physics

Volumn 42, Issue 10, 2009, Pages

  Li, Y F ^a,b   Yao, B ^a,c   Deng, R ^a,c   Li, B H ^a   Zhang, J Y ^a   Zhao, Y M ^a   Jiang, D Y ^a   Zhang, Z Z ^a   Shan, C X ^a   Shen, D Z ^a   Fan, X W ^a   Lu, Y M ^a,d  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c JILIN UNIVERSITY   (China)

^d SHENZHEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; DETECTION RANGE; ORDERS OF MAGNITUDE; PEAK RESPONSIVITY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; REJECTION RATIOS; RESPONSE RANGE; REVERSE BIAS; SAPPHIRE SUBSTRATES; SHORT WAVELENGTHS; SPECTRAL RESPONSE MEASUREMENTS; TURN ON VOLTAGE; ULTRAVIOLET REGION; ZNO;

CORUNDUM; CRYSTAL GROWTH; DISTILLATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTODIODES; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 70149101299     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/10/105102     Document Type: Article

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