Molecular beam epitaxial growth of ZnO on Si substrate using ozone as an oxygen source

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 1, 2003, Pages 67-70

  Fujita, Miki ^a   Kawamoto, Noriaki ^a   Tatsumi, Tomohiko ^a   Yamagishi, Katsumi ^a   Horikoshi, Yoshiji ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

MBE; Oxygen; PL; Si; ZnO

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRON EMISSION; MOLECULAR BEAM EPITAXY; OXIDATION; OXYGEN; OZONE; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

LOW-TEMPERATURE PHOTOLUMINESCENCE MEASUREMENT; ZINC OXIDE FILM;

ZINC OXIDE;

EID: 0038005518     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.67     Document Type: Article

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