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Volumn 24, Issue 17, 2013, Pages

Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): From ultraviolet to infrared emission

(6) Albert, S a Bengoechea Encabo, A a Sanchez Garcia M A a Kong, X b Trampert, A b Calleja, E a

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION EFFICIENCIES; ENERGY CONTRIBUTION; EXCITONIC EMISSION; GAN BUFFER LAYERS; INFRARED EMISSIONS; INTERNAL QUANTUM EFFICIENCY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SELECTIVE AREA GROWTH;

EPITAXIAL GROWTH; GALLIUM NITRIDE; INDIUM; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SILICON; SURFACE ROUGHNESS;

GALLIUM ALLOYS;

EID: 84876105094 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/24/17/175303 Document Type: Article

Times cited : (56)

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