Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxy

Electronics Letters

Volumn 44, Issue 13, 2008, Pages 819-821

  Kishino, K ^a,b   Hoshino, T ^a   Ishizawa, S ^a,b   Kikuchi, A ^a,b  

^a SOPHIA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS; CRYSTAL GROWTH; CRYSTALLOGRAPHY; ENGINEERING TECHNOLOGY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MASKS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULES; OPTICAL DEVICES; PLASMA (HUMAN); PLASMAS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SILICON; TECHNOLOGY; TITANIUM; WINDOWS;

(1 1 0) SURFACE; (OTDR) TECHNOLOGY; GAN CRYSTALS; MASK PATTERNING; NANO COLUMNS; NANO-COLUMNS; PATTERNED SILICON; RF PLASMAS; SELECTIVE AREA GROWTH (SAG); SI(2 1 1) SUBSTRATES; WINDOW WIDTHS;

GALLIUM ALLOYS;

EID: 45749087723     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20081323     Document Type: Article

References (10)

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