Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

Journal of Crystal Growth

Volumn 353, Issue 1, 2012, Pages 1-4

  Bengoechea Encabo, A ^a   Albert, S ^a   Sanchez Garcia, M A ^a   Lopez L L ^b   Estrade S ^b   Rebled, J M ^b,c   Peiro F ^b   Nataf, G ^d   De Mierry, P ^d   Zuniga Perez, J ^d   Calleja, E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSITY OF BARCELONA   (Spain)

^c CSIC   (Spain)

^d CRHEA CNRS   (France)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Nitrides

Indexed keywords

A-PLANE GAN; COLLOIDAL LITHOGRAPHY; E-BEAM LITHOGRAPHY; GEOMETRICAL ARRANGEMENTS; NANO-COLUMNS; NANOHOLES; SELECTIVE AREA GROWTH; SELECTIVE EPITAXY; VERTICAL GROWTH;

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY;

GALLIUM NITRIDE;

EID: 84861451347     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.11.069     Document Type: Article

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