Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies

Applied Physics Letters

Volumn 100, Issue 23, 2012, Pages

  Albert, S ^a   Bengoechea Encabo, A ^a   Lefebvre, P ^a,b   Barbagini, F ^a   Sanchez Garcia, M A ^a   Calleja, E ^a   Jahn, U ^c   Trampert, A ^c  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAN TEMPLATE; LOW TEMPERATURES; MORPHOLOGY CHANGES; MORPHOLOGY CONTROL; NANO-COLUMNS; PHOTOLUMINESCENCE MEASUREMENTS; SELECTIVE AREA GROWTH; SEMIPOLAR; SUBSTRATE TEMPERATURE;

MORPHOLOGY; NANOSTRUCTURES; OPTICAL PROPERTIES;

GALLIUM NITRIDE;

EID: 84862136306     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4728115     Document Type: Article

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