Effect of stress and free-carrier concentration on photoluminescence in InN

Applied Physics Letters

Volumn 92, Issue 12, 2008, Pages

  Song, D Y ^a   Holtz, M E ^a   Chandolu, A ^a   Bernussi, A ^a   Nikishin, S A ^a   Holtz, M W ^a   Gherasoiu, I ^b  

^a TEXAS TECH UNIVERSITY   (United States)

^b Veeco Instruments Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPILAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; STRAIN; X RAY DIFFRACTION;

BAND FILLINGS; FREE-CARRIER CONCENTRATION;

INDIUM COMPOUNDS;

EID: 41349098560     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2899941     Document Type: Article

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