Ordered gan/InGaN nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission

International Journal of High Speed Electronics and Systems

Volumn 21, Issue 1, 2012, Pages

  Albert, S ^a   Bengoechea Encabo, A ^a   Sanchez GarcIa M A ^a   Barbagini, F ^a   Calleja, E ^a   Luna, E ^b   Trampert, A ^b   Jahn, U ^b   Lefebvre, P ^a,c   LOpez L L ^d   EstradE S ^d   Rebled, J M ^d   PeirO F ^d   Nataf, G ^e   De Mierry, P ^e   ZuNiga PErez J ^e  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c UNIVERSITÉ MONTPELLIER 2   (France)

^d UNIVERSITY OF BARCELONA   (Spain)

^e CRHEA CNRS   (France)

Author keywords

GaN; InGaN; Nanorods; SAG; white light

Indexed keywords

A-PLANE GAN; CONFINEMENT EFFECTS; GAN; GAN LAYERS; GAN NANORODS; GAN/INGAN; INGAN; NANORODS ARRAYS; NANORODS GROWN; NON-POLAR; OPTICAL EMISSIONS; OPTICAL QUALITIES; QUANTUM DISKS; SAG; SAPPHIRE TEMPLATES; SELECTIVE AREA GROWTH; SELF-ASSEMBLED; SELF-ASSEMBLED GROWTH; SI (1 1 1); WHITE LIGHT; WHITE LIGHT EMISSION;

GALLIUM NITRIDE; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; SAPPHIRE; SILICON;

NANORODS;

EID: 84871586668     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156412500103     Document Type: Conference Paper

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