Enhancement of piezoelectric response of diluted Ta doped AlN

Applied Surface Science

Volumn 270, Issue , 2013, Pages 225-230

  Liu, Hongyan ^a   Zeng, Fei ^a   Tang, Guangsheng ^a   Pan, Feng ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

AlN; Piezoelectric response; Ta

Indexed keywords

ALUMINUM NITRIDE; BINDING ENERGY; III-V SEMICONDUCTORS; LATTICE CONSTANTS; NITROGEN; PIEZOELECTRICITY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; TANTALUM; ZINC SULFIDE;

C-AXIS ORIENTATIONS; CRYSTALLINITIES; DOPING CONTENT; HIGH RESOLUTION; NITROGEN ATOM; PIEZOELECTRIC RESPONSE; UNIT-CELL VOLUME; WURTZITE STRUCTURE;

NITROGEN COMPOUNDS;

EID: 84875214807     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.01.005     Document Type: Article

References (36)

1. Y. Taniyasu, M. Kasu, and T. Makimoto An aluminium nitride light-emitting diode with a wavelength of 210 nanometres Nature 441 2006 325 328
2. B. Fan, F. Zeng, C. Chen, Y. Yang, P. Yang, and F. Pan Influence of strain and grain boundary variations on magnetism of Cr-doped AlN films Journal of Applied Physics 106 2009 073907
3. C. Mirpuri, S. Xu, J. Long, and K. Ostrikov Low-temperature plasma-assisted growth of optically transparent, highly oriented nanocrystalline AlN Journal of Applied Physics 101 2007 024312
4. N. Komatsu, T. Satoh, M. Honjo, T. Futatuki, K. Masumoto, C. Kimura, and H. Aoki Influence of inserting AlN between AlSiON and 4HSiC interface for the MIS structure Applied Surface Science 257 2011 8307 8310
5. D.T. Phan, and G.S. Chung The effect of geometry and post-annealing on surface acoustic wave characteristics of AlN thin films prepared by magnetron sputtering Applied Surface Science 257 2011 8696 8701
6. T. Aubert, O. Elmazria, B. Assouar, L. Bouvot, and M. Oudich Surface acoustic wave devices based on AlN/sapphire structure for high temperature applications Applied Physics Letters 96 2010 203503
7. R. Mock, and H. Meixner A miniaturized high-temperature pressure sensor for the combustion chamber of a spark ignition engine Sensors and Actuators A: Physical 25 1990 103 106
8. A. Sanz-Hervas, M. Clement, E. Iborra, L. Vergara, J. Olivares, and J. Sangrador Degradation of the piezoelectric response of sputtered c-axis AlN thin films with traces of non-(0 0 0 2) x-ray diffraction peaks Applied Physics Letters 88 2006 161915
9. J. Christman, H. Maiwa, S.H. Kim, A. Kingon, and R. Nemanich Piezoelectric measurements with atomic force microscopy MRS Proceedings 541 1998 617
10. F. Engelmark, G. Fucntes, I. Katardjiev, A. Harsta, U. Smith, and S. Berg Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition Journal of Vacuum Science and Technology A 18 2000 1609 1612
11. M. Akiyama, C.N. Xu, K. Nonaka, K. Shobu, and T. Watanabe Statistical approach for optimizing sputtering conditions of highly oriented aluminum nitride thin films Thin Solid Films 315 1998 62 65
12. M. Akiyama, T. Kamohara, K. Kano, A. Teshigahara, and N. Kawahara Influence of oxygen concentration in sputtering gas on piezoelectric response of aluminum nitride thin films Applied Physics Letters 93 2008 021903
13. T. Kamohara, M. Akiyama, N. Ueno, M. Sakamoto, K. Kano, A. Teshigahara, N. Kawahara, and N. Kuwano Influence of sputtering pressure on polarity distribution of aluminum nitride thin films Applied Physics Letters 89 2006 243507
14. M. Akiyama, T. Kamohara, N. Ueno, M. Sakamoto, K. Kano, A. Teshigahara, and N. Kawahara Polarity inversion in aluminum nitride thin films under high sputtering power Applied Physics Letters 90 2007 151910
15. M.A. Dubois, and P. Muralt Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering Journal of Applied Physics 89 2001 6389
16. T. Kamohara, M. Akiyama, N. Ueno, K. Nonaka, and N. Kuwano Influence of aluminum nitride interlayers on crystal orientation and piezoelectric property of aluminum nitride thin films prepared on titanium electrodes Thin Solid Films 515 2007 4565 4569
17. H. Liu, G. Tang, F. Zeng, and F. Pan Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature Journal of Crystal Growth 363 2013 80 85
18. Y. Yang, C. Song, X. Wang, F. Zeng, and F. Pan Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films Applied Physics Letters 92 2008 012907
19. M. Akiyama, T. Kamohara, K. Kano, A. Teshigahara, Y. Takeuchi, and N. Kawahara Enhancement of piezoelectric response in scandium aluminum nitride alloy thin films prepared by dual reactive cosputtering Advanced Materials 21 2009 593 596
20. M. Akiyama, K. Kano, and A. Teshigahara Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films Applied Physics Letters 95 2009 162107
21. 1-x N alloys Physical Review Letters 104 2010 137601
22. 1-x N thin films Journal of Applied Physics 111 2012 093527
23. 1-x N Applied Physics Letters 97 2010 112902
24. 0.1 N thin films evaluated at 2.5 GHz film bulk acoustic resonators Applied Physics Letters 99 2011 092903
25. 0.875 N Applied Physics Letters 94 2009 151911
26. E. McCullen, J. Thakur, Y. Danylyuk, G. Auner, and L. Rosenberger Investigation of the occupation behavior for oxygen atoms in AlN films using Raman spectroscopy Journal of Applied Physics 103 2008 063504
27. L. Bergman, D. Alexson, P.L. Murphy, R.J. Nemanich, M. Dutta, M.A. Stroscio, C. Balkas, H. Shin, and R.F. Davis Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure Physical Review B 59 1999 12977
28. A. Cros, N. Garro, A. Cantarero, J. Coraux, H. Renevier, and B. Daudin Raman scattering as a tool for the evaluation of strain in GaN/AlN quantum dots: the effect of capping Physical Review B 76 2007 165403
29. A. Arranz, and C. Palacio Composition of tantalum nitride thin films grown by low-energy nitrogen implantation: a factor analysis study of the Ta 4f XPS core level Applied Physics A: Materials Science & Processing 81 2005 1405 1410
30. T. Elangovan, S. Murugeshan, D. Mangalaraj, P. Kuppusami, S. Khan, C. Sudha, V. Ganesan, R. Divakar, and E. Mohandas Synthesis and high temperature XRD studies of tantalum nitride thin films prepared by reactive pulsed dc magnetron sputtering Journal of Alloys and Compounds 509 2011 6400 6407
31. J. Ruffner, P. Clem, B. Tuttle, D. Dimos, and D. Gonzales Effect of substrate composition on the piezoelectric response of reactively sputtered AlN thin films Thin Solid Films 354 1999 256 261
32. F. Martin, P. Muralt, M.A. Dubois, and A. Pezous Thickness dependence of the properties of highly c-axis textured AlN thin films Journal of Vacuum Science & Technology A 22 2004 361
33. D. Karanth, and H. Fu Large electromechanical response in ZnO and its microscopic origin Physical Review B 72 2005 064116
34. Y. Yang, C. Song, X. Wang, F. Zeng, and F. Pan Cr-substitution-induced ferroelectric and improved piezoelectric properties of ZnCrO films Journal of Applied Physics 103 2008 074107
35. J. Luo, Y. Yang, X. Zhu, G. Chen, F. Zeng, and F. Pan Enhanced electromechanical response of Fe-doped ZnO films by modulating the chemical state and ionic size of the Fe dopant Physical Review B 82 2010 014116
36. Y. Chen, X. Zheng, and X. Feng The fabrication of vanadium-doped ZnO piezoelectric nanofiber by electrospinning Nanotechnology 21 2010 055708