Influence of oxygen concentration in sputtering gas on piezoelectric response of aluminum nitride thin films

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Akiyama, Morito ^a   Kamohara, Toshihiro ^a   Kano, Kazuhiko ^b   Teshigahara, Akihiko ^b   Kawahara, Nobuaki ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM; ALUMINUM COMPOUNDS; CONCENTRATION (PROCESS); GASES; LIGHT METALS; LITHOGRAPHY; NITRIDES; OXYGEN; PIEZOELECTRICITY; SILICON; THICK FILMS; THIN FILMS;

AL POLARITY; ALN FILMS; ALUMINUM NITRIDE (AIN TIN); ALUMINUM NITRIDE THIN FILMS; AMERICAN INSTITUTE OF PHYSICS (AIP); INFLUENCE OF OXYGEN; N-POLARITY; OXYGEN CONCENTRATIONS; PIEZOELECTRIC RESPONSES; SILICON (111) SUBSTRATES; SPUTTERING GASES;

NONMETALS;

EID: 47549092153     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2957654     Document Type: Article

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