Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature

Journal of Crystal Growth

Volumn 363, Issue , 2013, Pages 80-85

  Liu, H Y ^a   Tang, G S ^a   Zeng, F ^a   Pan, F ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

A1. X ray diffraction; B1. Nitrides; B2. Acousto optic materials; B2. Piezoelectric materials; B2. Semiconducting aluminum compounds

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; ACOUSTIC WAVES; ALUMINUM NITRIDE; DEPOSITION; NITROGEN; RESIDUAL STRESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION;

ACOUSTO-OPTIC MATERIALS; DC REACTIVE MAGNETRON SPUTTERING; DEPOSITION CONDITIONS; NITROGEN CONCENTRATIONS; OPTIMIZED DEPOSITION CONDITIONS; PREFERENTIAL ORIENTATION; SPUTTERING PARAMETERS; SURFACE ACOUSTIC WAVES;

SPUTTERING;

EID: 84875230667     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.10.008     Document Type: Article

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