Influence of inserting AlN between AlSiON and 4H-SiC interface for the MIS structure

Applied Surface Science

Volumn 257, Issue 20, 2011, Pages 8307-8310

  Komatsu, Naoyoshi ^a   Satoh, Tomohisa ^a   Honjo, Masatomo ^a   Futatuki, Takashi ^a   Masumoto, Keiko ^a   Kimura, Chiharu ^a   Aoki, Hidemitsu ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

AlN; AlSiON; Buffer layer; High temperature; MOSFET; Power device; Wide bandgap

Indexed keywords

ALUMINUM NITRIDE; BUFFER LAYERS; ENERGY GAP; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; INSULATING MATERIALS; INSULATION; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MIS DEVICES; MOSFET DEVICES; PLASTIC FILMS; SILICON CARBIDE; SILICON COMPOUNDS;

ALSION; HIGH TEMPERATURE; MOS-FET; POWER DEVICES; WIDE BAND GAP;

WIDE BAND GAP SEMICONDUCTORS;

EID: 79959368421     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.02.107     Document Type: Article

References (11)

1. N. Komatsu, K. Masumoto, H. Aoki, C. Kimura, and T. Sugino Characterization of Si-added aluminum oxide (AlSiO) films for power devices Applied Surface Science 256 2010 1803
2. K. Matsunouchi, N. Komatsu, C. Kimura, H. Aoki, and T. Sugino Growth and properties of YAlO film synthesized by RF magnetron sputtering Applied Surface Science 255 2009 5021
3. N. Komatsu, T. Sugino, C. Kimura, H. Aoki, H. Kurimoto, and K. Chikamatsu Characterization of aluminum silicate (AlSiO) insulator films IEEJ Transactions on Electronics, Information and Systems 127 2007 1822
4. 2 /SiC interface region induced by oxide thermal growth Applied Physics Letters 88 2006 041901
5. K.C. Chang, N.T. Nuhfer, L.M. Porter, and Q. Wahab High-carbon concentrations at the silicon dioxide-silicon carbide interface identified by electron energy loss spectroscopy Applied Physics Letters 77 2000 2186
6. 2 /SiC interface formed by supercritical water oxidation at low temperature Japanese Journal of Applied Physics 49 04 2010 DF18
7. C.D. Wagner, W.M. Riggs, L.E. Davis, J.F. Moulder, and G.E. Muilenberg Handbook of X-ray Photoelectron Spectroscopy 1978 PerkinElmer Corporation Physical Electronics Division Eden Prairie, Minnesota, USA
8. 2 aerogel film/metal interface Thin solid Films 447 2004 575
9. Jiayou Feng, Junqing Xie, and Qingwei Mo Reactive partially ionized beam deposition of AlN thin films Materials Letters 33 1997 133
10. B. Rauschenbach, K. Breuer, and G. Leonhardt Characterization of nitrogen-ion-implanted aluminium Nuclear Instruments and Methods in Physics Research B47 1990 396
11. L.M. Terman An investigation of surface states at a silicon/silicon dioxide interface employing metal-oxide-silicon diodes Solid State electronics 5 1962 285