Nanoscale evidence of erbium clustering in Er-doped silicon-rich silica

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-8

  Talbot, Etienne ^a   Lardé, Rodrigue ^a   Pareige, Philippe ^a   Khomenkova, Larysa ^b   Hijazi, Khalil ^b   Gourbilleau, Fabrice ^b  

^a UNIVERSITÉ ET INSA DE ROUEN   (France)

^b UNIVERSITÉ DE CAEN   (France)

Author keywords

Atom probe tomography; Erbium; Nanoclusters; Nanocrystallites; Photoluminescence; Silicon; Sputtering

Indexed keywords

ANNEALING; ATOMS; ERBIUM; IONS; MAGNETRON SPUTTERING; NANOCLUSTERS; NANOCRYSTALLITES; NANOCRYSTALS; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; PROBES; SILICA; SILICON; SILICON OXIDES; SPUTTERING; TEMPERATURE; THIN FILMS;

ATOM PROBE TOMOGRAPHY; CHEMICAL COMPOSITIONS; HIGH TEMPERATURE ANNEALING TREATMENTS; LOW TEMPERATURE TREATMENT; PHOTOLUMINESCENCE EMISSION; RADIATIVE RECOMBINATION; RADIO FREQUENCY MAGNETRON SPUTTERING; VISIBLE SPECTRAL RANGE;

ERBIUM COMPOUNDS;

EID: 84875189332     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-39     Document Type: Article

References (39)

1. Fujii M, Yoshida M, Kanzawa Y, Hayashi S, Yamamoto K: 1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: evidence for energy transfer from Si nanocrystals to Er3+. Appl Physics Lett 1997, 71(9):1198.
2. Pacifici D, Irrera A, Franzo G, Miritello M, Iacona F, Priolo F: Erbium-doped Si nanocrystals: optical properties and electroluminescent devices. Physica E: Low-dimensional Syst Nanostructures 2003, 16(3-4):331-340.
3. Kenyon AJ, Trwoga PF, Federighi M, Pitt CW: Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions. J Phys: Condensed Matter 1994, 6(21):L319.
4. Kik PG, Brongersma ML, Polman A: Strong exciton-erbium coupling in Si nanocrystal-doped SiO2. App Phys Lett 2325, 76(17):2000.
5. Daldosso N, Luppi M, Ossicini S, Degoli E, Magri R, Dalba G, Fornasini P, Grisenti R, Rocca F, Pavesi L, Boninelli S, Priolo F, Spinella C, Iacona F: Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2. Phys Rev B 2003, 68:085327.
6. Ternon C, Dufour C, Gourbilleau F, Rizk R: Role of interfaces in nanostructured silicon luminescence. Eur Phys J B 2004, 41:325.
7. Gourbilleau F, Madelon R, Dufour C, Rizk R: Fabrication and optical properties of Er-doped multilayers Si-rich SiO2/SiO2: size control, optimum Er-Si coupling and interaction distance monitoring. Opt Mater 2005, 27(5):868-875.
8. Jhe JH, Shin JH, Kim KJ, Moon DW: The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering. Appl Phys Lett 2003, 82(25):4489.
9. Garrido B, Garcia C, Seo SY, Pellegrino P, Navarro-Urrios D, Daldosso N, Pavesi L, Gourbilleau F, Rizk R: Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters. Physical Review B 2007, 76(24):245308.
10. Izeddin I, Moskalenko AS, Yassievich IN, Fujii M, Gregorkiewicz T: Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals. Phys Rev Lett 2006, 97(20):207401.
11. Pellegrino P, Garrido B, Arbiol J, Garcia C, Lebour Y, Morante JR: Site of Er ions in silica layers codoped with Si nanoclusters and Er. Appl Phys Lett 2006, 88(12):121915.
12. Gourbilleau F, Levalois M, Dufour C, Vicens J, Rizk R: Optimized conditions for an enhanced coupling rate between Er ions and Si nanoclusters for an improved 1.54-μmemission. J Appl Phys 2004, 95(7):3717.
13. Franzo G, Boninelli S, Pacifici D, Priolo F, Iacona F, Bongiorno C: Sensitizing properties of amorphous Si clusters on the 1.54-μm luminescence of Er in Si-rich SiO2. Appl Phys Lett 2003, 82(22):3871.
14. Bian LF, Zhang CG, Chen WD, Hsu CC, Shi T: Local environment of Er3+ in Er-doped Si nanoclusters embedded in SiO2 films. Appl Phys Lett 2006, 89(23):231927.
15. Maurizio C, D'Acapito F, Priolo F, Franzo G, Iacona F, Borsella E, Padovani S, Mazzoldi P: Site of Er ions in Er-implanted silica containing Si nanoclusters. Opt Mater 2005, 27(5):900-903.
16. Noe P, Okuno H, Jager JB, Delamadeleine E, Demichel O, Rouvìere JL, Calvo V, Maurizio C, D'Acapito F: The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films. Nanotechnology 2009, 20(35):355704.
17. Thogersen A, Mayandi J, Finstad T, Olsen A, Diplas S, Mitome M, Bando Y: The formation of Er-oxide nanoclusters in SiO2 thin films with excess Si. J Appl Phys 2009, 106:014305.
18. Talbot E, Lard́e R, Gourbilleau F, Dufour C, Pareige P: Si nanoparticles in SiO2: An atomic scale observation for optimization of optical devices. EPL (Europhysics Lett) 2009, 87(2):26004.
19. Roussel M, Talbot E, Gourbilleau F, Pareige P: Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography. Nanoscale Res Lett 2011, 6:164.
20. Larson DJ, Foord DT, Petford-Long AK, Liew H, Blamire MG, Cerezo A, Smith GDW: Field-ion specimen preparation using focused ion-beam milling. Ultramicroscopy 1999, 79(1-4):287-293.
21. Hijazi K, Khomenkova L, Gourbilleau F, Cardin J, Rizk R: Enhanced fraction of coupled Er in silicon-rich silicon oxide layers grown by magnetron co-sputtering. J Luminescence 2009, 129(12):1886-1889.
22. Cerezo A, Godfrey TJ, Smith GDW: Application of a position-sensitive detector to atom probe microanalysis. Rev Sci Instrum 1988, 59(6):862.
23. Blavette D, Bostel A, Sarrau JM, Deconihout B, Menand A: An atom probe for three-dimensional tomography. Nature 1993, 363:432-435.
24. Gault B, Vurpillot F, Vella A, Gilbert M, Menand A, Blavette D, Deconihout B: Design of a femtosecond laser assisted tomographic atom probe. Rev Sci Instrum 2006, 77(4):043705.
25. Talbot E, Roussel M, Genevois C, Pareige P, Khomenkova L, Portier X, Gourbilleau F: Atomic scale observation of phase separation and formation of silicon clusters in Hf high-κ silicates. J Appl Phys 2012, 111(10):103519.
26. Cadel E, Vurpillot F, Larde R, Duguay S, Deconihout B: Depth resolution function of the laser assisted tomographic atom probe in the investigation of semiconductors. J Appl Phys 2009, 106(4):044908.
27. Cadel E, Barreau N, Kessler J, Pareige P: Atom probe study of sodium distribution in polycrystalline Cu(In, Ga)Se2 thin film. Acta Materialia 2010, 58(7):2634-2637.
28. Lard́e R, Talbot E, Pareige P, Bieber H, Schmerber G, Colis S, Pierron-Bohnes V, Dinia A: Evidence of superparamagnetic Co clusters in pulsed laser deposition-grown Zn0.9Co0.1O thin films using atom probe tomography. J AmChemSoc 2011, 133(5):1451-1458.
29. Hijazi K, Rizk R, Cardin J, Khomenkova L, Gourbilleau F: Towards an optimum coupling between Er ions and Si-based sensitizers for integrated active photonics. J Appl Phys 2009, 106(2):024311.
30. Vurpillot F, Bostel A, Blavette D: Trajectory overlaps and local magnification in three-dimensional atom probe. Appl Phys Lett 2000, 76(21):3127-3129.
31. Tsoukalas D, Tsamis C, Normand P: Diffusivity measurements of silicon dioxide layers using isotopically pure material. J Appl Phys 2001, 89:7809.
32. Tsoukalas D, Tsamis C, Normand P: Use of isotopically pure silicon material to estimate silicon diffusivity in silicon dioxide. Mater Res Soc Symp Proc 2001, 669:J.3.7.1.
33. Xu F, Xiao Z, Cheng G, Yi Z, Zhang T, Gu L, Wang X: Erbium-doped silicon-rich silicon dioxide/silicon thin films fabricated by metal vapour vacuum arc ion source implantation. J Phys: Condensed Matter 2002, 14(3):L63-L69.
34. Kashtiban RJ, Bangert U, Crowe I, Halsall MP, Sherliker B, Harvey AJ, Eccles J, Knights AP, Gwilliam R, Gass M: Structural and compositional study of erbium-doped silicon nanocrystals by HAADF, EELS and HRTEM techniques in an aberration corrected STEM. J Phys: Conf Series 2009, 209:012043.
35. Kanjilal A, Rebohle L, Voelskow M, Skorupa W, Helm M: Defectengineered blue-violet electroluminescence from Ge nanocrystal rich SiO2 layers by Er doping. J Appl Phys 2009, 106(2):026104.
36. Polman A, Jacobson DC, Eaglesham DJ, Kistler RC, Poate JM: Optical doping of waveguide materials by MeV Er implantation. J Appl Phys 1991, 70(7):3778.
37. Sckerl MW, Guldberg-Kjaer S, Rysholt Poulsen, M, Shi P, Chevallier J: Precipitate coarsening and self organization in erbium-doped silica. Phys Rev B 1999, 59(21):13494.
38. Crowe IF, Kashtiban RJ, Sherliker B, Bangert U, Halsall MP, Knights AP, Gwilliam RM: Spatially correlated erbium and Si nanocrystals in coimplanted SiO2 after a single high temperature anneal. J Appl Phys 2010, 107(4):044316.
39. Lu YW, Julsgaard B, Petersen MC, Jensen RVS, Pedersen TG, Pedersen K, Larsen AN: Erbium diffusion in silicon dioxide. Appl Phys Lett 2010, 97(14):141903.