Structural and compositional study of Erbium-doped silicon nanocrystals by HAADF, EELS and HRTEM techniques in an aberration corrected STEM

Journal of Physics: Conference Series

Volumn 209, Issue , 2010, Pages

  Kashtiban, R J ^a   Bangert, U ^a   Crowe, I ^a   Halsall, P ^a   Sherliker, B ^a   Harvey, J ^a   Eccles, J ^a   Knights, A P ^b   Gwilliam, R ^c   Gass, M ^d  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b MCMASTER UNIVERSITY   (Canada)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d DARESBURY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ERBIUM; ION BEAMS; OPTICAL WAVEGUIDES; SILICON; SILICON OXIDES;

ABERRATION-CORRECTED STEM; COMPOSITIONAL PROPERTIES; COMPOSITIONAL STUDIES; ER DOPED SIO; ERBIUM-DOPED SILICON; EXCESS SI; ION BEAM IMPLANTATION; SI (100) SUBSTRATE;

AMORPHOUS SILICON;

EID: 77950502056     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/209/1/012043     Document Type: Conference Paper

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