Enhanced fraction of coupled Er in silicon-rich silicon oxide layers grown by magnetron co-sputtering

Journal of Luminescence

Volumn 129, Issue 12, 2009, Pages 1886-1889

  Hijazi, K ^a   Khomenkova, L ^a   Gourbilleau, F ^a   Cardin, J ^a   Rizk, R ^a  

^a UNIVERSITÉ DE CAEN   (France)

Author keywords

Erbium; Infrared absorption; Magnetron sputtering; Photoluminescence; Refractive index; Si rich silicon oxide

Indexed keywords

ANNEALING TREATMENTS; AS-GROWN; DEPOSITION CONDITIONS; EMISSION FEATURES; ER-DOPED; MAGNETRON CO-SPUTTERING; MODERATE TEMPERATURE; NON-RESONANT EXCITATION; OPTICAL EMISSIONS; SI-RICH SILICON OXIDE; SILICA LAYERS; SILICON RICH SILICON OXIDES;

ABSORPTION; AGGLOMERATION; ANNEALING; ARGON; ERBIUM; INFRARED ABSORPTION; LIGHT REFRACTION; MAGNETRONS; PHOTOLUMINESCENCE; REFRACTIVE INDEX; REFRACTOMETERS; SILICA; SILICON;

SILICON OXIDES;

EID: 70349974320     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2009.04.037     Document Type: Article

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