Defect-engineered blue-violet electroluminescence from Ge nanocrystal rich SiO2 layers by Er doping

Journal of Applied Physics

Volumn 106, Issue 2, 2009, Pages

  Kanjilal, A ^a   Rebohle, L ^a   Voelskow, M ^a   Skorupa, W ^a   Helm, M ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE-TO-AMORPHOUS; ER CONCENTRATIONS; ER-DOPED; ER-DOPING; GE CONCENTRATIONS; GE NANOCRYSTALS; MICRO-STRUCTURAL; NANOCRYSTAL SIZES; OXYGEN DEFICIENCY; PEAK SHIFTING; SURFACE-TO-VOLUME RATIO;

DOPING (ADDITIVES); ELECTROLUMINESCENCE; ENERGY TRANSFER; ERBIUM; LEAKAGE (FLUID); LIGHT; LIGHT EMISSION; NANOCRYSTALS; OXYGEN; QUENCHING; SILICON COMPOUNDS;

GERMANIUM;

EID: 68249147648     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3183904     Document Type: Article

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