Spatially correlated erbium and Si nanocrystals in coimplanted SiO 2 after a single high temperature anneal

Journal of Applied Physics

Volumn 107, Issue 4, 2010, Pages

  Crowe, Iain F ^a   Kashtiban, Reza J ^a   Sherliker, Ben ^a   Bangert, Ursel ^a   Halsall, Matthew P ^a   Knights, Andrew P ^b   Gwilliam, Russell M ^c  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b MCMASTER UNIVERSITY   (Canada)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON (A-SI); CHEMICAL MAPS; CO-IMPLANTATION; CONTROL SAMPLES; CRYSTALLINE HOSTS; CRYSTALLINE PHASE; CRYSTALLINE SI (C-SI); DARK FIELD; DIFFRACTION CONTRAST; ELECTRON MICROGRAPH; EMISSION SPECTRUMS; HIGH CONCENTRATION; HIGH RESOLUTION; HIGH RESOLUTION SCANNING; HIGH TEMPERATURE; INFRARED LUMINESCENCE; INHOMOGENEOUS BROADENING; ION-ION INTERACTION; LOW TEMPERATURES; O K-EDGES; ROOM TEMPERATURE; SI NANOCRYSTAL; SILICON NANOCRYSTALS; SPATIAL CORRELATIONS; SPATIAL OVERLAP;

AGGLOMERATION; COMPLEXATION; CRYSTALLINE MATERIALS; ELECTRON ENERGY LOSS SPECTROSCOPY; EMISSION SPECTROSCOPY; ENERGY DISSIPATION; ERBIUM; FLUORESCENCE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT; NANOCLUSTERS; NANOCRYSTALS; OXYGEN; PHASE INTERFACES; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON OXIDES;

AMORPHOUS SILICON;

EID: 77749264697     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3294645     Document Type: Article

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