The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films

Nanotechnology

Volumn 20, Issue 35, 2009, Pages

  Noe P ^a   Okuno, H ^a   Jager, J B ^a   Delamadeleine, E ^a   Demichel, O ^a   Rouviere J L ^a   Calvo, V ^a   Maurizio, C ^b   D'Acapito, F ^b  

^a CEA GRENOBLE   (France)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ATOMIC ENERGY LEVELS; ER-DOPED; ERBIUM ION; EXCITATION CROSS SECTION; HIGH DENSITY; LOCAL ORDER; MATRIX; NONRESONANT; OPTICAL EXCITATIONS; PL LIFETIME; PL MEASUREMENTS; POSTGROWTH ANNEALING; SI NANOSTRUCTURES; SILICON RICH SILICON OXIDES; STRONG CORRELATION; TEM; TIME-RESOLVED;

ABSORPTION SPECTROSCOPY; AMORPHOUS SILICON; ANNEALING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IONS; NANOCLUSTERS; OXIDE FILMS; PHOTOEXCITATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON OXIDES; SULFUR COMPOUNDS; THIN FILMS;

ERBIUM;

AMMONIA; ERBIUM; SILICON; SILICON DERIVATIVE; SILICON OXIDE; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL STRUCTURE; CONTROLLED STUDY; CRYSTAL STRUCTURE; FILM; FRACTIONATION; NUCLEAR ENERGY; PHOTOLUMINESCENCE; PRIORITY JOURNAL; ROENTGEN SPECTROSCOPY; SENSITIZATION; TRANSMISSION ELECTRON MICROSCOPY;

EID: 70349142716     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/35/355704     Document Type: Article

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