The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering

Applied Physics Letters

Volumn 82, Issue 25, 2003, Pages 4489-4491

  Jhe, Ji Hong ^a   Shin, Jung H ^a   Kim, Kyung Joong ^b   Moon, Dae Won ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ERBIUM; IONS; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SILICA; SPUTTERING;

ION SPUTTERING;

SEMICONDUCTOR SUPERLATTICES;

EID: 0038044806     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1586458     Document Type: Article

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