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Volumn 106, Issue 1, 2009, Pages

The formation of Er-oxide nanoclusters in SiO2 thin films with excess Si

(7) Thogersen, Annett a Mayandi, Jeyanthinath a Finstad, Terje a Olsen, Arne a Diplas, Spyros b Mitome, Masanori c Bando, Yoshio c

a UNIVERSITY OF OSLO (Norway)

b SINTEF MATERIALS AND CHEMISTRY (Norway)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY FILTERED TEM; EXCESS SI; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SI LAYER; TEM;

AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; ELECTRON BEAMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MICROSCOPES; ELECTRONS; ENERGY DISSIPATION; ERBIUM; NANOCLUSTERS; OSTWALD RIPENING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 67650745331 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3148266 Document Type: Article

Times cited : (9)

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